Title :
Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity
Author :
Shchekin, O.B. ; Park, G. ; Huffaker, D.L. ; Mo, Q. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Data are presented on continuous wave operation of two-stack quantum dot lasers designed with reduced temperature sensitivity in their threshold. The InAs quantum dots are designed to have a wide energy spacing (/spl sim/102 meV) between the ground and first excited radiative transitions. Selectively oxidized stripe lasers have continuous wave threshold currents as low as 1.2 mA for 2 μm wide stripes and minimum threshold current densities of 26 A/cm2 for 13-μ-m wide stripes. Broad area lasers have continuous wave threshold current densities as low as 40 A/cm2, even for p-up mounting. Ground state lasing is obtained up to the highest temperature measured of 326 K.
Keywords :
III-V semiconductors; current density; indium compounds; quantum well lasers; semiconductor quantum dots; sensitivity; 1.2 mA; 2 mum; 326 K; InAs; InAs quantum dots; continuous wave threshold current densities; continuous wave threshold currents; excited radiative transitions; ground state lasing; highest temperature; low-threshold CW two-stack quantum-dot laser; minimum threshold current densities; p-up mounting; reduced temperature sensitivity; selectively oxidized stripe lasers; two-stack quantum dot lasers design; wide energy spacing; Land surface temperature; Laser excitation; Laser transitions; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stationary state; Temperature measurement; Temperature sensors; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE