DocumentCode
1391980
Title
Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers
Author
Liu, X.F. ; Qiu, B.C. ; Ke, M.L. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
12
Issue
9
fYear
2000
Firstpage
1141
Lastpage
1143
Abstract
A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The blue shift of photoluminescence spectra can be varied in the range of 0-160 nm. Bandgap-tuned lasers were integrated on a single chip using this technique to assess the post-processed material characteristics and demonstrate its application in optoelectronic integration.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser tuning; photoluminescence; quantum well lasers; semiconductor quantum wells; 0 to 160 nm; InGaAs-AlInGaAs; InGaAs-AlInGaAs material system; InGaAs-AlInGaAs multiple-quantum-well material; PECVD SiO/sub 2/ protection layers; SiO/sub 2/; bandgap energy; bandgap-tuned lasers; blue shift; multiple bandgap shifts; optoelectronic integration; photoluminescence spectra; post-processed material characteristics; precise tuning; sputtered SiO/sub 2/ deposition; sputtered SiO/sub 2/ intermixing technique; Absorption; Annealing; Laser tuning; Optical materials; Optical waveguides; Photoluminescence; Photonic band gap; Quantum well devices; Quantum well lasers; Semiconductor materials;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.874215
Filename
874215
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