• DocumentCode
    1392005
  • Title

    Fabrication of ultrafast Si based MSM photodetector

  • Author

    Löken, M. ; Kappius, L. ; Manti, S. ; Buchal, Ch.

  • Author_Institution
    Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany
  • Volume
    34
  • Issue
    10
  • fYear
    1998
  • fDate
    5/14/1998 12:00:00 AM
  • Firstpage
    1027
  • Lastpage
    1028
  • Abstract
    The authors report on ultrafast metal-semiconductor-metal (MSM) photodetectors. The devices are manufactured on an epitaxial CoSi2 ground plate on silicon, and uses single crystalline silicon as the photosensitive layer. The MSM photodiodes show an impulse response of up to 3.5 ps FWHM on (111) Si and 6.7 ps FWHM on (100) Si. An external quantum efficiency of 4.6% was measured
  • Keywords
    chromium; cobalt compounds; elemental semiconductors; metal-semiconductor-metal structures; photodetectors; photodiodes; silicon; (111) Si substrate; 4.6 percent; Cr-Si-CoSi2; Si; Si based MSM photodetector; epitaxial CoSi2 ground plate; single crystalline Si photosensitive layer; ultrafast photodetector;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980661
  • Filename
    682998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1392005