• DocumentCode
    1392011
  • Title

    Microwave operation of multi-channel 2D MESFET

  • Author

    Peatman, W.C.B. ; Tsai, R. ; Weikle, R.M., II ; Shur, M.

  • Author_Institution
    Adv. Device Technol. Inc., Charlottesville, VA, USA
  • Volume
    34
  • Issue
    10
  • fYear
    1998
  • fDate
    5/14/1998 12:00:00 AM
  • Firstpage
    1029
  • Lastpage
    1030
  • Abstract
    A new microwave field effect transistor (FET) utilising direct Schottky gate contacts to the edge of a two-dimensional electron gas is described. Multi-channel two dimensional MESFETs having 48 parallel half-micron channels (24 μm total width) were fabricated on a double-δ-doped Al0.24Ga0.76As/In0.18 Ga0.82As/GaAs heterostructure and exhibited fT and fmax of 14 and 45 GHz, respectively
  • Keywords
    Schottky gate field effect transistors; doping profiles; gallium arsenide; microwave field effect transistors; two-dimensional electron gas; 14 GHz; 2DEG; 45 GHz; Al0.24Ga0.76As-In0.18Ga0.82 As-GaAs; direct Schottky gate contacts; double-δ-doped heterostructure; field effect transistor; microwave FET; microwave operation; multi-channel 2D MESFET; two dimensional MESFETs; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980706
  • Filename
    682999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1392011