Title :
Microwave operation of multi-channel 2D MESFET
Author :
Peatman, W.C.B. ; Tsai, R. ; Weikle, R.M., II ; Shur, M.
Author_Institution :
Adv. Device Technol. Inc., Charlottesville, VA, USA
fDate :
5/14/1998 12:00:00 AM
Abstract :
A new microwave field effect transistor (FET) utilising direct Schottky gate contacts to the edge of a two-dimensional electron gas is described. Multi-channel two dimensional MESFETs having 48 parallel half-micron channels (24 μm total width) were fabricated on a double-δ-doped Al0.24Ga0.76As/In0.18 Ga0.82As/GaAs heterostructure and exhibited fT and fmax of 14 and 45 GHz, respectively
Keywords :
Schottky gate field effect transistors; doping profiles; gallium arsenide; microwave field effect transistors; two-dimensional electron gas; 14 GHz; 2DEG; 45 GHz; Al0.24Ga0.76As-In0.18Ga0.82 As-GaAs; direct Schottky gate contacts; double-δ-doped heterostructure; field effect transistor; microwave FET; microwave operation; multi-channel 2D MESFET; two dimensional MESFETs; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980706
