Effect of N2-annealing on n-type Si metal-oxide-semiconductor capacitors by using liquid-phase deposition SiO2

Low-temperature silicon-oxide films were grown on n-type Si surfaces using the liquid-phase deposition (LPD) method. Various temperature annealing was employed to improve the electrical properties of LPD-oxide. Metal-oxide-semiconductor (MOS) capacitors were fabricated to characterise the annealing effects on the n-type Si/LPD-oxide interface using current-voltage and capacitance-voltage measurements. Observations showed that the MOS capacitor with as-grown LPD-oxide has a large leakage current density of 2.1-10^-5 A/cm² and fixed oxide charge density of 2.8×10¹² cm^-2. After 500°C annealing in N₂ environment for 30 min, the leakage current density and fixed oxide charge density are drastically reduced to 3.2 10^-8 A/cm² and 1.2×10¹² cm^-2, respectively.