Gate oxide charge-to-breakdown correlation to MOSFET hot-electron degradation

Substrate current by itself is found not to be a sufficient indicator of degradation. Experiments using active-area test capacitors with and without poly edges confirm that the gate-oxide trap density beneath the poly edges is equally important in determining the degradation. Certain processing steps have been identified as being responsible for gate-oxide degradation. An optimization of these steps has resulted in improved hot-electron degradation behavior.<>