• DocumentCode
    1392032
  • Title

    Stacked quantum dot transistor and charge-induced confinement enhancement

  • Author

    Guo, L. Jay ; Chou, Stephen Y.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ
  • Volume
    34
  • Issue
    10
  • fYear
    1998
  • fDate
    5/14/1998 12:00:00 AM
  • Firstpage
    1030
  • Lastpage
    1031
  • Abstract
    A new quantum dot transistor that has a polysilicon dot floating gate stacked on top of a silicon quantum dot channel has been fabricated. It is observed that charging of the floating gate not only shifts the threshold voltage of the quantum dot transistor, but also significantly increases the peak-to-valley ratio and peak separation in the conductance oscillations
  • Keywords
    semiconductor quantum dots; silicon; single electron transistors; Si; Si quantum dot channel; charge-induced confinement enhancement; conductance oscillations; peak separation; peak-to-valley ratio; polysilicon dot floating gate; stacked quantum dot transistor; threshold voltage shifting;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980717
  • Filename
    683000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1392032