• DocumentCode
    1392038
  • Title

    Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs

  • Author

    Ihn, B. ; Lee, J. ; Roh, T.M. ; Kim, Y.-S. ; Kim, B.

  • Author_Institution
    Photonics Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea
  • Volume
    34
  • Issue
    10
  • fYear
    1998
  • fDate
    5/14/1998 12:00:00 AM
  • Firstpage
    1031
  • Lastpage
    1033
  • Abstract
    The dispersion effect of current gain related to surface recombination in AlGaAs/GaAs HBTs has been studied. For an HBT with an emitter area of 3×20 μm2, the surface recombination current-to-total base current ratio is ~0.47 at <100 MHz, and the ratio is decreased to zero at frequencies between 100 MHz and 3 GHz, clearly indicating that the current gain is dispersive
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; surface recombination; 100 MHz to 3 GHz; AlGaAs-GaAs; HBTs; current gain; frequency dispersion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980701
  • Filename
    683001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1392038