Title :
Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs
Author :
Ihn, B. ; Lee, J. ; Roh, T.M. ; Kim, Y.-S. ; Kim, B.
Author_Institution :
Photonics Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
5/14/1998 12:00:00 AM
Abstract :
The dispersion effect of current gain related to surface recombination in AlGaAs/GaAs HBTs has been studied. For an HBT with an emitter area of 3×20 μm2, the surface recombination current-to-total base current ratio is ~0.47 at <100 MHz, and the ratio is decreased to zero at frequencies between 100 MHz and 3 GHz, clearly indicating that the current gain is dispersive
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; surface recombination; 100 MHz to 3 GHz; AlGaAs-GaAs; HBTs; current gain; frequency dispersion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980701
