Title :
Waveguide-type PnpN optical thyristor operating at 1.55 μm
Author :
Kim, D.G. ; Lee, J.J. ; Choi, Y.W. ; Lee, S. ; Kang, B.K. ; Kim, S.H. ; Futakuchi, N. ; Nakano, Y.
Author_Institution :
Nat. Opt. Interconnection Lab., Chung-Ang Univ., Seoul, South Korea
Abstract :
Waveguide-type PnpN depleted optical thyristors operating at 1.55 μm are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs-InP multiple quantum-well (MQW) and InGaAsP bulk layers for the active n- and p-layers. The thyristors show sufficient nonlinear s-shape I-V characteristics and spontaneous emission along the waveguide. Very low switching voltages of 2.1 and 2.0 (V) for bulk and MQW thyristors with L=300 μm and 350 μm respectively are measured.
Keywords :
gallium arsenide; indium compounds; optical communication equipment; optical fabrication; optical waveguides; photothyristors; semiconductor quantum wells; spontaneous emission; 1.55 mum; 2 V; 2.1 V; 300 mum; 350 mum; InGaAs-InP; InGaAs-InP multiple quantum-well; InGaAsP; InGaAsP bulk layers; nonlinear s-shape I-V characteristics; spontaneous emission; very low switching voltages; waveguide-type PnpN optical thyristor; Nonlinear optics; Optical computing; Optical devices; Optical interconnections; Optical packet switching; Optical waveguides; Quantum well devices; Stimulated emission; Thyristors; US Department of Transportation;
Journal_Title :
Photonics Technology Letters, IEEE
