DocumentCode :
1392298
Title :
Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 
m
Author :
Chen, Baile ; Jiang, W.Y. ; Yuan, Jinrong ; Holmes, Archie L., Jr. ; Onat, Bora M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume :
23
Issue :
4
fYear :
2011
Firstpage :
218
Lastpage :
220
Abstract :
An InP-based p-i-n photodiode with optical response out to 3.4 μm was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In0.34Ga0.66As/5-nm GaAs0.25Sb0.75 quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm2 under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 × 108 cm·Hz1/2·W-1 at 3 μm at 290 K.
Keywords :
III-V semiconductors; compensation; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; semiconductor quantum wells; GaAs0.25Sb0.75; In0.34Ga0.66As; InP; absorption region; dark current density; molecular beam epitaxy; optical response; p-i-n photodiode; photodetector; semiconductor quantum wells; strain compensation; temperature 290 K; temperature 293 K to 298 K; wavelength 3 mum; wavelength 5 nm; wavelength 7 nm; Detectivity; GaAsSb; InGaAs; mid-wavelength infrared (MWIR); photodiode; type-II multiple quantum wells (MQWs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2096205
Filename :
5654538
Link To Document :
