DocumentCode
1392308
Title
Switching mechanisms in microscale memristors
Author
Prodromakis, Themistoklis ; Michelakis, K. ; Toumazou, Christofer
Author_Institution
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
Volume
46
Issue
1
fYear
2010
Firstpage
63
Lastpage
65
Abstract
It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical R OFF/R ON ratios.
Keywords
integrated memory circuits; memristors; semiconductor device manufacture; switching networks; ROFF/RON ratios; fourth missing passive element; memory; microscale memristors; nanometre dimensions; switching mechanisms; switching networks;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.2716
Filename
5395572
Link To Document