DocumentCode :
1392308
Title :
Switching mechanisms in microscale memristors
Author :
Prodromakis, Themistoklis ; Michelakis, K. ; Toumazou, Christofer
Author_Institution :
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
Volume :
46
Issue :
1
fYear :
2010
Firstpage :
63
Lastpage :
65
Abstract :
It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical R OFF/R ON ratios.
Keywords :
integrated memory circuits; memristors; semiconductor device manufacture; switching networks; ROFF/RON ratios; fourth missing passive element; memory; microscale memristors; nanometre dimensions; switching mechanisms; switching networks;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.2716
Filename :
5395572
Link To Document :
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