• DocumentCode
    1392308
  • Title

    Switching mechanisms in microscale memristors

  • Author

    Prodromakis, Themistoklis ; Michelakis, K. ; Toumazou, Christofer

  • Author_Institution
    Inst. of Biomed. Eng., Imperial Coll. London, London, UK
  • Volume
    46
  • Issue
    1
  • fYear
    2010
  • Firstpage
    63
  • Lastpage
    65
  • Abstract
    It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical R OFF/R ON ratios.
  • Keywords
    integrated memory circuits; memristors; semiconductor device manufacture; switching networks; ROFF/RON ratios; fourth missing passive element; memory; microscale memristors; nanometre dimensions; switching mechanisms; switching networks;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.2716
  • Filename
    5395572