Title :
Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates
Author :
Hoel, Virginie ; Defrance, Nicolas ; Douvry, Y. ; De Jaeger, J.C. ; Vellas, N. ; Gaquiere, Christopher ; di Forte-Poisson, M.A. ; Thorpe, Julie ; Langer, Robert
Author_Institution :
IEMN, USTL, Villeneuve d´Ascq, France
Abstract :
Low microwave noise performance of AlGaN/GaN HEMTs fabricated on MOCVD epitaxial structures grown on composite substrates (SiCopSiC) is reported. They are made of a thin SiC single-crystal layer transferred on top of a thick polycrystalline SiC wafer. The transistor fabrication process is similar to the one developed for AlGaN/GaN devices on SiC substrate. A minimum noise figure of 0.12 dB with an associated gain of 14.8 dB at 3 GHz is found, showing the capability of gallium-nitride based devices for low noise microwave applications in the S-band.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; semiconductor epitaxial layers; wide band gap semiconductors; AlGaN-GaN; HEMTs; MOCVD; S-band; composite substrates; epitaxial structures; frequency 3 GHz; gain 14.8 dB; low microwave noise; noise figure 0.12 dB;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2576
