DocumentCode :
1392846
Title :
5.8 dBm PdB, high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology
Author :
Ji Ge ; Hong-Fei Yao ; Dan-Yu Wu ; Yu-Xiong Cao ; Yong-Bo Su ; Xian-Tai Wang ; Xiao-Xi Ning ; Zhi Jin
Author_Institution :
Inst. of Microelectron., Beijing, China
Volume :
48
Issue :
24
fYear :
2012
Firstpage :
1543
Lastpage :
1545
Abstract :
A five-stage W-band low-noise amplifier (LNA) based on the authors´ InP/InGaAs double heterojunction bipolar transistors (DHBTs) process is reported. The LNA achieves a peak gain of 33.1´dB and 7.8´dB noise figure at 81GHz. Its output-related 1´dB compression point (P1dB) lies at 5.8 dBm. The high gain and linearity of the LNA is mainly attributed to the performance of the DHBTs exhibiting a high breakdown voltage (BVceo 8.7V), a current gain cutoff frequency (fT) of 167GHz, and a maximum oscillation frequency (fmax) of 265GHz.
Keywords :
gallium arsenide; heterojunction bipolar transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; InP-InGaAs; LNA; double heterojunction bipolar transistors; double heterojunction bipolar transistors process; frequency 167 GHz; frequency 265 GHz; frequency 81 GHz; gain 33.1 dB; high breakdown voltage DHBT technology; high gain W-band low-noise amplifier; noise figure 7.8 dB;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.3001
Filename :
6400385
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1392846
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