• DocumentCode
    1392846
  • Title

    5.8 dBm PdB, high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology

  • Author

    Ji Ge ; Hong-Fei Yao ; Dan-Yu Wu ; Yu-Xiong Cao ; Yong-Bo Su ; Xian-Tai Wang ; Xiao-Xi Ning ; Zhi Jin

  • Author_Institution
    Inst. of Microelectron., Beijing, China
  • Volume
    48
  • Issue
    24
  • fYear
    2012
  • Firstpage
    1543
  • Lastpage
    1545
  • Abstract
    A five-stage W-band low-noise amplifier (LNA) based on the authors´ InP/InGaAs double heterojunction bipolar transistors (DHBTs) process is reported. The LNA achieves a peak gain of 33.1´dB and 7.8´dB noise figure at 81GHz. Its output-related 1´dB compression point (P1dB) lies at 5.8 dBm. The high gain and linearity of the LNA is mainly attributed to the performance of the DHBTs exhibiting a high breakdown voltage (BVceo 8.7V), a current gain cutoff frequency (fT) of 167GHz, and a maximum oscillation frequency (fmax) of 265GHz.
  • Keywords
    gallium arsenide; heterojunction bipolar transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; InP-InGaAs; LNA; double heterojunction bipolar transistors; double heterojunction bipolar transistors process; frequency 167 GHz; frequency 265 GHz; frequency 81 GHz; gain 33.1 dB; high breakdown voltage DHBT technology; high gain W-band low-noise amplifier; noise figure 7.8 dB;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.3001
  • Filename
    6400385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1392846