Title :
Design of narrow-linewidth phase-shifted distributed feedback lasers
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
2/1/1988 12:00:00 AM
Abstract :
By taking into account the practical constraints put on the bias current of a stripe geometry laser, the author has calculated the minimum linewidth of a InGaAsP/InP phase-shifted distributed feedback laser, corresponding to the maximum available output power. Plots useful for the design of optimised structures have been obtained showing that high coupling coefficients are not always desirable
Keywords :
distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; spectral line breadth; InGaAsP-InP; bias current; narrow-linewidth phase-shifted distributed feedback lasers; semiconductor;
Journal_Title :
Optoelectronics, IEE Proceedings J
