Title :
Improved device structure of quantum dot gate FET to obtain more stable intermediate state
Author :
Karmakar, Sanjay ; Gogna, M. ; Jain, Faquir C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Abstract :
Quantum dot gate field effect transistors (QDGFETs) produce three states in their transfer characteristics, which make them suitable for ternary logic circuit implementation. The basic problem of a QDGFET is the dissociation of quantum dots in the gate region. An improved device structure of a QDGFET is introduced which can solve this problem. The three-state behaviour of the QDGFET can be observed even after ten months. The experimental results are compared and show the improved nature of the device.
Keywords :
MOSFET; quantum dots; ternary logic; QDGFET; improved device structure; intermediate state stability; quantum dot gate FET; quantum dot gate field effect transistors; ternary logic circuit implementation; three-state behaviour; transfer characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.3726
