Title :
Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays
Author :
Kwon, Wookhyun ; Jeon, Jaeseok ; Hutin, Louis ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
An electromechanical diode nonvolatile memory cell design is proposed for implementation of compact (4F2) cross-point memory arrays. The first prototype cells are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics and are multi-time programmable (with endurance exceeding 104 set/reset cycles).
Keywords :
micromechanical devices; programmable circuits; semiconductor diodes; semiconductor storage; compact 4F2 cross-point nonvolatile memory arrays; electromechanical diode nonvolatile memory cell design; multitime programmable cells; retention characteristics; set-reset voltages; Computer architecture; Force; Microprocessors; Nonvolatile memory; Prototypes; Random access memory; Voltage measurement; Cross-bar memory; cross-point memory; electro-mechanical device; nonvolatile memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2174191
