Title :
Analysis of the Pump Wavelength Dependence of a 1060-nm VECSEL
Author :
Haupt, Sebastian ; Furitsch, Michael ; Lindberg, Hans H. ; Pietzonka, Ines ; Strauss, U. ; Bacher, Gerd
Author_Institution :
Osram Opto Semicond. GmbH, Regensburg, Germany
fDate :
3/1/2012 12:00:00 AM
Abstract :
We have developed an optically pumped infrared 1060-nm vertical-external-cavity surface-emitting laser for an application as a frequency doubled green laser in mobile projectors. The efficiency has been investigated as a function of pump wavelength and a differential efficiency ηdiff of 50% has been demonstrated using an 808-nm pump laser source. The usage of a longer pump wavelength decreases the quantum defect and increases the differential efficiency to over 52%. The pump light absorption in the chip is investigated as a function of pump wavelength and absorber thickness. A thicker absorber layer enables the usage of a longer pump wavelength and hence reduces the quantum defect further.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; light absorption; optical harmonic generation; optical pumping; quantum well lasers; semiconductor quantum wells; surface emitting lasers; InGaAs-GaAs; VECSEL; absorber thickness; differential efficiency; efficiency 50 percent; frequency doubled green laser; infrared vertical external cavity surface emitting laser; mobile projectors; pump light absorption; pump wavelength dependence; quantum defect; wavelength 1060 nm; wavelength 808 nm; Absorption; Laser excitation; Photonics; Pump lasers; Vertical cavity surface emitting lasers; External cavity; semiconductor disk laser; semiconductor laser; surface-emitting laser; vertical-external-cavity surface-emitting laser (VECSEL) pump wavelength;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2178823