Analysis of the Pump Wavelength Dependence of a 1060-nm VECSEL

Author

Haupt, Sebastian ; Furitsch, Michael ; Lindberg, Hans H. ; Pietzonka, Ines ; Strauss, U. ; Bacher, Gerd

Author_Institution

Osram Opto Semicond. GmbH, Regensburg, Germany

Volume

24

Issue

5

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

341

Lastpage

343

Abstract

We have developed an optically pumped infrared 1060-nm vertical-external-cavity surface-emitting laser for an application as a frequency doubled green laser in mobile projectors. The efficiency has been investigated as a function of pump wavelength and a differential efficiency η_diff of 50% has been demonstrated using an 808-nm pump laser source. The usage of a longer pump wavelength decreases the quantum defect and increases the differential efficiency to over 52%. The pump light absorption in the chip is investigated as a function of pump wavelength and absorber thickness. A thicker absorber layer enables the usage of a longer pump wavelength and hence reduces the quantum defect further.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; light absorption; optical harmonic generation; optical pumping; quantum well lasers; semiconductor quantum wells; surface emitting lasers; InGaAs-GaAs; VECSEL; absorber thickness; differential efficiency; efficiency 50 percent; frequency doubled green laser; infrared vertical external cavity surface emitting laser; mobile projectors; pump light absorption; pump wavelength dependence; quantum defect; wavelength 1060 nm; wavelength 808 nm; Absorption; Laser excitation; Photonics; Pump lasers; Vertical cavity surface emitting lasers; External cavity; semiconductor disk laser; semiconductor laser; surface-emitting laser; vertical-external-cavity surface-emitting laser (VECSEL) pump wavelength;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2178823

Filename

6097023