DocumentCode :
1393088
Title :
Thermal turnover in germanium p-n junctions
Author :
Matz, A.W.
Volume :
104
Issue :
18
fYear :
1957
fDate :
11/1/1957 12:00:00 AM
Firstpage :
555
Lastpage :
564
Abstract :
The static reverse characteristics of an alloyed germanium p-n junction are analysed, taking into account an avalanche multiplication factor. The condition for thermal stability is examined, the onset of thermal runaway is related to a thermal turnover phenomenon, and the existence of a negative-resistance region is predicted. The existence of such thermal negative-resistance regions in germanium p-n junctions has been verified experimentally, and the results are analysed semi-quantitatively, showing fairly good agreement with the theory.
Keywords :
semiconductor diodes; semiconductors;
fLanguage :
English
Journal_Title :
Proceedings of the IEE - Part B: Radio and Electronic Engineering
Publisher :
iet
Type :
jour
DOI :
10.1049/pi-b-1.1957.0205
Filename :
5243260
Link To Document :
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