Title :
Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron
Author :
Bryce, A.C. ; Marsh, J.H. ; Gwilliam, R. ; Glew, R.W.
Author_Institution :
Dept. of Electron & Electr. Eng., Galsgow Univ., UK
fDate :
4/1/1991 12:00:00 AM
Abstract :
Impurity induced disordering of an InGaAs/InGaAlAs quantum well structure has been investigated using boron and fluorine. The impurities were introduced by ion implantation and followed by thermal annealing. Small blue shifts in the exciton peak were observed in the boron implanted material. Much larger blue shifts, over 40 meV, were observed in the fluorine implanted material. At annealing temperatures greater than 650°C, red shifts in the exciton peak of unimplanted material were measured
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; impurity and defect absorption spectra of inorganic solids; indium compounds; ion implantation; semiconductor quantum wells; 650 degC; IOE; InGaAs-InGaAlAs; annealing temperatures; blue shifts; exciton peak; implanted material; impurity induced disordering; ion implantation; optical modulators; photoluminescence; quantum wells; red shifts; thermal annealing;
Journal_Title :
Optoelectronics, IEE Proceedings J
