Title :
GaAs/AlGaAs quantum well laser for high-speed applications
Author :
Lang, H. ; Wolf, H.D. ; Korte, L. ; Hedrich, H. ; Hoyler, C. ; Thanner, C.
Author_Institution :
Siemens AG, Corp. Res. & Dev., Munich, Germany
fDate :
4/1/1991 12:00:00 AM
Abstract :
GaAs/AlGaAs multiple quantum well ridge waveguide laser diodes have been fabricated using MOVPE and a dry etch process for the ridge structure. The threshold currents of these lasers are 10-15 mA at 25°C and the characteristic temperature T0 exceeds 200 K. Modulation bandwidths of up to 14 GHz and relaxation oscillation frequencies of up to 36 GHz are achieved with these devices. The modulation bandwidth exceeds 10 GHz in a temperature range up to 80°C
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; optical communication equipment; semiconductor junction lasers; 10 GHz; 10 to 15 mA; 14 GHz; 200 K; 25 degC; 36 GHz; GaAs-AlGaAs; MOVPE; dry etch process; high-speed applications; modulation bandwidths; multiple quantum well ridge waveguide laser diodes; quantum well laser; relaxation oscillation frequencies; threshold currents;
Journal_Title :
Optoelectronics, IEE Proceedings J
