Characteristics of photonic parallel memory in relation to fabrication process

Author

Chino, T. ; Matsuda, K. ; Adachi, H. ; Shibata, J.

Author_Institution

Semicond. Res. Centre, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

138

Issue

2

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

128

Lastpage

132

Abstract

The characteristics of the bistable switch integrated in photonic parallel memory are strongly affected by the fabrication process, in particular, the fabrication of the passivation film. The holding current of the switch was increased to more than 1 mA for reactive ion etching and plasma CVD, which also caused the increase of the leakage current of the phototransistor included in the switch, They are thought to be induced by the decrease of P atoms at the boundary region, which was observed by means of Auger electron spectroscopy. A low holding current of 24 μA and a low leakage current of 16 nA were attained by using polyimide as a passivation film

Keywords

integrated optics; optical bistability; optical logic; optical storage; optical switches; optical workshop techniques; parallel architectures; passivation; polymer films; 1 mA; 16 mA; 24 muA; Auger electron spectroscopy; bistable switch; boundary region; fabrication process; holding current; integrated optics; leakage current; parallel logic gate; passivation film; photonic parallel memory; phototransistor; plasma CVD; polyimide; reactive ion etching;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

68372