Title :
Emission spectral width broadening for InGaAsP/InP superluminescent diodes
Author :
Mikami, O. ; Noguchi, Y. ; Yasaka, H. ; Magari, K. ; Kondo, S.
Author_Institution :
NTT Opto-Electron. Lab., Atsugi, Japan
fDate :
4/1/1991 12:00:00 AM
Abstract :
This is a study of emission spectral width broadening for 1.3 μm and 1.5 μm InGaAsP/InP superluminescent diodes (SLDs). It proposes two new fabricated structures, stacked active layer (STAC) and tandem active layer (TANAC), and confirms that the emission spectral widths can be successfully broadened for both. By applying these new active layer structures to laser diodes (LDs), two new functions are demonstrated. One is wavelength-switching in STAC LDs and the other is SLD/LD mode switching in TANAC LDs
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; spectral line breadth; superradiance; 1.3 micron; 1.5 micron; InGaAsP-InP; emission spectral width broadening; laser diodes; mode switching; stacked active layer; superluminescent diodes; tandem active layer; wavelength-switching;
Journal_Title :
Optoelectronics, IEE Proceedings J
