Title :
Silicon carbide: its nonabrasive electrical properties and applications
Author :
Babula, Andrew J.
Author_Institution :
Loyola Marymount Univ., Los Angeles, CA, USA
Abstract :
Silicon carbide (SiC) has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficiently studied and applied. Its many advantages, with its ability to withstand high temperatures being the most prominent, are making silicon carbide a choice for new applications and an improved substitute for traditional electronic materials
Keywords :
bonds (chemical); ceramics; crystal growth; crystal structure; electrical conductivity; impurities; lattice constants; polymorphism; refractories; semiconductor growth; semiconductor materials; silicon compounds; thermal stability; SiC; UV detection; applications; avionics; bonding structure; coloured screen displays; crystal growth; crystal structures; crystallographic features; diamond-type structure; electronic materials; high temperature stability; lattice parameters; nonabrasive electrical properties; polytypes; refractory; semiconducting properties; Atomic layer deposition; Bonding; Crystals; Lattices; Material properties; Shape; Silicon carbide; Stacking; Temperature; Zinc;
Journal_Title :
Potentials, IEEE
