DocumentCode :
1393648
Title :
A relational database for semiconductor device parametric data
Author :
Harvey, Jerry ; Dyatlovitsky, Eugene
Author_Institution :
VLSI Technol. Inc., San Antonio, TX, USA
Volume :
3
Issue :
3
fYear :
1990
fDate :
8/1/1990 12:00:00 AM
Firstpage :
136
Lastpage :
141
Abstract :
Semiconductor device parametric test data collected by lot, wafer, and die form a hierarchical data structure that lends itself to two relational models reflecting two data views. The two models may be integrated by carefully considering relationships, and the resultant structure is applicable to in-process data collection. Semiconductor device parametric data models are discussed from the two viewpoints, and a practical database based on the set-theoretic relational data model is developed. Application of the developed model to semiconductor in-process and functional test data is also discussed
Keywords :
electronic engineering computing; integrated circuit manufacture; relational databases; semiconductor technology; die level; functional test data; hierarchical data structure; in-process data collection; lot level; practical database; relational database; relational models; semiconductor device parametric data; semiconductor device parametric test data; set-theoretic relational data model; wafer level; Circuit testing; Computer integrated manufacturing; Condition monitoring; Data models; Fabrication; Performance evaluation; Production facilities; Relational databases; Semiconductor device modeling; Semiconductor devices;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.56564
Filename :
56564
Link To Document :
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