Title :
GaAs monolithic integrated photoreceiver for 0.8 μm wavelength: association of Schottky photodiode and FET
Author :
Verriele, H. ; Lorriaux, J.L. ; Legry, P. ; Gouy, J.P. ; Vilcot, J.P. ; Decoster, D.
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lilles, Villeneuve d´´Ascq, France
fDate :
4/1/1988 12:00:00 AM
Abstract :
The authors report the fabrication and the characterisation of a GaAs planar monolithic integrated photoreceiver. It consists of a semiplanar Schottky photodiode, associated with a field-effect transistor. Static, dynamic and noise properties have been investigated and interpreted, taking into account the particular characteristics of the material and the design of the integrated circuit. For example, sensitivity up to -30 dBm can be achieved at 250 Mbit/s for a 1E-9 bit error rate
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; integrated optoelectronics; optical communication equipment; photodiodes; receivers; 0.8 micron; 250 Mbit/s; FET; GaAs photoreceiver; Schottky photodiode; dynamic properties; field-effect transistor; integrated circuit; monolithic integrated photoreceiver; noise properties; semiconductor; static properties;
Journal_Title :
Optoelectronics, IEE Proceedings J
