DocumentCode :
1393953
Title :
A submicrometer MOS transistor I-V model for circuit simulation
Author :
Masuda, Hiroo ; Mano, Jun-Ichi ; Ikematsu, Ryuichi ; Sugihara, Hitoshi ; Aoki, Yukio
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
10
Issue :
2
fYear :
1991
fDate :
2/1/1991 12:00:00 AM
Firstpage :
161
Lastpage :
170
Abstract :
A MOSFET I-V model (MOSTSM) that is composed of simple analytical equations applicable down to a 0.5-μm MOSFET operation is proposed. This model provides enhanced performance with respect to gate electric field effects on channel conductance and channel-length modulation in saturation operation. Subthreshold conduction is modeled, and simple and accurate geometrical effect (channel length; L) formulations for the model equations are developed. Features of the model are channel-length dependency of threshold voltage and effective channel conductance. A formulation of body factor on device threshold (Kb) is proposed as a function of channel length. Experiments were conducted using various devices to demonstrate the model accuracy. The experimental results show that the MOSTSM model ensures curve-fitting accuracy within 1% for maximum average error over biases, even when the geometry effects are included. The devices used in the experiments were in the 0.5-2.0-μm range of CMOS fabrication technology
Keywords :
electric field effects; insulated gate field effect transistors; semiconductor device models; 0.5 micron; I-V model; MOSFET; MOSTSM model; analytical equations; body factor; channel conductance; channel-length dependency; channel-length modulation; circuit simulation; curve-fitting accuracy; device threshold; effective channel conductance; gate electric field effects; saturation operation; submicrometer MOS transistor; submicron device; subthreshold conduction; threshold voltage; CMOS technology; Curve fitting; Equations; Fabrication; Geometry; MOSFET circuits; Semiconductor device modeling; Solid modeling; Subthreshold current; Threshold voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.68403
Filename :
68403
Link To Document :
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