Title :
Evaluation of FET performance and restrictions by low-frequency measurements
Author :
Vadala, Valeria ; Raffo, Antonio ; Colantonio, P. ; Cipriani, Elisa ; Giannini, F. ; Lanzieri, C. ; Pantellini, A. ; Nalli, Andrea ; Bosi, Gianni ; Vannini, Giorgio
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Abstract :
In this paper a characterization technique for the evaluation of transistor performance and restrictions is presented, based on a simple and low-cost measurement system. Experimental examples, carried out on a 0.5 × 1000 μm2GaN HEMT, are reported. The validity of the proposed approach is demonstrated by comparing the results with the ones obtained by means of commonly adopted measurement setups.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device measurement; wide band gap semiconductors; FET performance; GaN; HEMT; high electron mobility transistors; low-frequency measurements; Current measurement; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Power generation; Semiconductor device measurement; GaN HEMTs; Semiconductor device measurements; microwave amplifiers;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
Conference_Location :
Leuven
DOI :
10.1109/INMMIC.2014.6815070
