Nonlinear model for 40-GHz cold-FET operation

Author

Avolio, Gustavo ; Raffo, Antonio ; Angelov, Iltcho ; Vadala, Valeria ; Crupi, Giovanni ; Caddemi, Alina ; Vannini, Giorgio ; Schreurs, Dominique

Author_Institution

Electron. Eng. Dept., KU Leuven, Leuven, Belgium

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

3

Abstract

We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today´s nonlinear network vector analyzers.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave mixers; semiconductor device models; GaAs; RF operating frequency; cold-FET mixer; cold-FET operation; frequency 40 GHz; low-frequency large signals; model parameter extraction; nonlinear characterization; nonlinear currents; nonlinear model; nonlinear network vector analyzers; pHEMT; size 0.15 mum; Current measurement; Data models; Frequency measurement; Integrated circuit modeling; Mathematical model; Radio frequency; Semiconductor device measurement; Microwave measurements; microwave transistors; nonlinear model;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on

Conference_Location

Leuven

Type

conf

DOI

10.1109/INMMIC.2014.6815072

Filename

6815072