DocumentCode
1394266
Title
A Si-bipolar technology for optical fiber transmission rates above 10 Gb/s
Author
Albers, Jens N. ; Schreiber, Hans-Ulrich
Author_Institution
Ruhr Univ. Bochum, Germany
Volume
9
Issue
5
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
652
Lastpage
655
Abstract
A multiplexer operating at up to 12 Gb/s has been demonstrated using a simple, but optimized, silicon bipolar technology with 2 μm lithography. Using this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least 15 Gb/s by changing to the 1.5 μm lithography. The results of experimental investigations and circuit simulations show that low-cost silicon-based bipolar circuits will be available for future optical-fiber transmission systems with data rates higher than 10 Gb/s
Keywords
bipolar integrated circuits; elemental semiconductors; integrated circuit technology; multiplexing equipment; optical communication equipment; photolithography; silicon; 10 to 12 Gbit/s; 2 micron; Si bipolar technology; circuit simulations; multiplexer; optical fiber transmission rates; photolithography; Bipolar transistors; Bit rate; Capacitance; Circuits; Etching; Lithography; Metallization; Multiplexing; Optical fibers; Paper technology;
fLanguage
English
Journal_Title
Selected Areas in Communications, IEEE Journal on
Publisher
ieee
ISSN
0733-8716
Type
jour
DOI
10.1109/49.87632
Filename
87632
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