Title :
8.8 W CW power from broad-waveguide Al-free active-region (λ=805 nm) diode lasers
Author :
Wade, J.K. ; Mawst, L.J. ; Botez, D. ; Morris, J.A.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
fDate :
5/28/1998 12:00:00 AM
Abstract :
Al-free active-region (λ=805 nm) diode lasers with 1 μm thick InGaP waveguide layers provide continuous wave powers as high as 8.8 W from 1.25 mm long devices with 4%/95% facet-coating reflectivities and 100 μm wide stripes. The transverse beam pattern is Gaussian-like with a 36° beamwidth and the series resistance is only 48 mΩ
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor lasers; waveguide lasers; 1 micron; 100 micron; 48 mohm; 8.8 W; 805 nm; CW power; InGaP; beamwidth; broad-waveguide active-region diode lasers; facet-coating reflectivities; series resistance; transverse beam pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980775
