• DocumentCode
    1394385
  • Title

    Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers

  • Author

    Savolainen, P. ; Toivonen, M. ; Kongas, J. ; Pessa, M. ; Corvini, P. ; Jansen, M.

  • Author_Institution
    Dept. of Phys., Tampere Univ. of Technol., Finland
  • Volume
    34
  • Issue
    11
  • fYear
    1998
  • fDate
    5/28/1998 12:00:00 AM
  • Firstpage
    1104
  • Lastpage
    1105
  • Abstract
    The record quantum efficiency operation of 680 nm GaInP/AlGaInP singlemode lasers is reported. A low threshold current of 40 mA and a very high quantum efficiency of 46% per facet were measured for a 5×500 μm2 as-cleaved ridge waveguide laser. For the AR/HR coated devices a quantum efficiency as high as 92% was achieved
  • Keywords
    aluminium compounds; gallium compounds; indium compounds; laser modes; ridge waveguides; semiconductor lasers; waveguide lasers; 40 mA; 680 nm; 92 percent; AR/HR coated devices; GaInP-AlGaInP; per facet efficiency; quantum efficiency; ridge waveguide singlemode lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980761
  • Filename
    684578