Title :
Over 10 Gb/s regenerators using monolithic ICs for lightwave communication systems
Author :
Hagimoto, Kazuo ; Miyagawa, Yuuzou ; Miyamoto, Yutaka ; Ohhata, Masanobu ; Suzuki, Tatsuhito ; Kikuchi, Hiroyuki
Author_Institution :
NTT Transmission Syst. Lab., Kanagawa, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
The design and performance of repeater circuits based on Si and GaAs MESFET process technologies are described. Repeater circuits were designed and fabricated for around 10 Gb/s repeater systems using Si and GaAs IC processes. The Si ICs operated up to 9 Gb/s, and the GaAs ICs exceeded 10 Gb/s. It was verified that regenerative repeater systems using these ICs and optical amplifiers exhibit a stable operation at 10 Gb/s. The performance of the 10 Gb/s repeater using these monolithic ICs and photonic circuits is discussed
Keywords :
field effect integrated circuits; optical communication equipment; repeaters; 10 Gbit/s; GaAs; MESFET process technologies; Si; design; lightwave communication systems; monolithic integrated circuits; optical amplifiers; performance; regenerative repeater systems; repeater circuits; Circuits; Gallium arsenide; High speed optical techniques; High-speed electronics; Laboratories; Large scale integration; Optical fibers; Productivity; Repeaters; Stimulated emission;
Journal_Title :
Selected Areas in Communications, IEEE Journal on
