Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells

Author

Maximenko, S.I. ; Messenger, S.R. ; Cress, C.D. ; Freitas, J.A., Jr. ; Walters, Robert J.

Author_Institution

Global Defense Technol. & Syst., Inc., Crofton, MD, USA

Volume

57

Issue

6

fYear

2010

Firstpage

3095

Lastpage

3100

Abstract

We report the results of the characterization of irradiated InGaP₂/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell in the monolithic MJ structure and correlate them with the illuminated (AM0, 1 sun, 25°C) current-voltage (I-V) and quantum efficiency (QE) measurements. Minority carrier lifetime degradation data from CL measurements confirm that the GaAs subcell dominates the overall degradation of the 3J device. Also, a carrier removal mechanism in the GaAs subcell was revealed from the EBIC/CL measurements.

Keywords

EBIC; III-V semiconductors; cathodoluminescence; electron beam effects; radiation effects; scanning electron microscopy; solar cells; CL-EBIC-SEM techniques; EBIC modes; carrier removal mechanism; cathodoluminescence imaging; cathodoluminescence spectroscopy; electron beam induced current; irradiated multijunction solar cells; irradiation damage; optoelectronic properties; quantum efficiency measurements; radiation effect characterization; scanning electron microscopy; Degradation; Gallium arsenide; Radiation effects; Scanning electron microscopy; Cathodoluminescence (CL); electron beam induced current (EBIC); irradiation damage; multijunction (MJ) solar cells; scanning electron microscopy (SEM);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2083691

Filename

5658019