Title :
Transimpedance amplifiers fabricated with In0.52Al0.48As/In0.53Ga0.47 As doped-channel heterostructures
Author :
Feng-Tso Chien ; Yi-Jen Chan
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li
fDate :
5/28/1998 12:00:00 AM
Abstract :
Transimpedance amplifiers fabricated with InAlAs/InGaAs doped-channel field effect transistors (DCFETs) are demonstrated. Owing to the high linearity of the DCFET device performance, this amplifier circuit shows a wide dynamic range in gain profile, indicating great promise for driving the next generation circuits in communication systems. The transimpedance gain is as high as 460 Ω and the maximum bandwidth 7.3 GHz
Keywords :
III-V semiconductors; JFET circuits; aluminium compounds; amplifiers; gallium arsenide; indium compounds; 7.3 GHz; In0.52Al0.48As-In0.53Ga0.47 As; InAlAs/InGaAs DCFET; bandwidth; circuit linearity; communication system; doped-channel heterostructure; dynamic range; gain; transimpedance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980763
