Thermal characterization of nonlinear charge trapping effects in GaN-FETs

Author

Gibiino, Gian Piero ; Cignani, Rafael ; Niessen, Daniel ; Schreurs, Dominique ; Santarelli, Alberto ; Filicori, Fabio

Author_Institution

DEI Guglielmo Marconi, Univ. of Bologna, Bologna, Italy

fYear

2014

fDate

2-4 April 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, we describe a pulsed characterization of a 0.25-μm GaN FET (W = 1 mm) at different operating temperatures. Through the use of a pulsing set-up featuring a VNA-like architecture, the drain DC current component is monitored and the effects of the AC-to-DC conversion due to nonlinear charge trapping phenomena are evaluated under various thermal conditions.

Keywords

III-V semiconductors; field effect transistors; gallium compounds; network analysers; wide band gap semiconductors; AC-to-DC conversion; GaN; GaN FET; VNA-like architecture; drain DC current component; nonlinear charge trapping phenomena; pulsed characterization; pulsing setup; size 0.25 mum; thermal characterization; Charge carrier processes; Dispersion; Field effect transistors; Gallium nitride; Logic gates; Pulse measurements; Temperature measurement; Electro-Thermal empirical modelling; GaN FETs; Pulsed characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on

Conference_Location

Leuven

Type

conf

DOI

10.1109/INMMIC.2014.6815103

Filename

6815103