Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits

Author

Li, Yanfeng ; Rezzak, Nadia ; Zhang, En Xia ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Wang, Jingqiu ; Wang, Donglin ; Wu, Yanjun ; Cai, Shuang

Author_Institution

Accelicon Technol., Inc., Cupertino, CA, USA

Volume

57

Issue

6

fYear

2010

Firstpage

3570

Lastpage

3574

Abstract

Space applications using advanced foundry processes require device models that accurately include the dependence of total-ionizing dose (TID) response on process variability and layout. An automated flow is described for TID-aware process design kit generation using new test chips, modeling, and simulation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.

Keywords

CMOS integrated circuits; leakage currents; process design; radiation effects; transistors; CMOS technology; TID response; TID-aware process design kit generation; TID-induced leakage current; advanced foundry process design kits; automated flow; process-related variability; radiation effects; radiation response; space applications; test chips; total-ionizing dose; transistor mismatch; Process design; Radiation effects; Stress; Mismatch; TID; process design kit; process variability; radiation effects; stress;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2086478

Filename

5658025