DocumentCode
139458
Title
RF non-linearities from Si-based substrates
Author
Esfeh, B. Kazemi ; Ben Ali, K. ; Raskin, Jean-Pierre
Author_Institution
ICTEAM, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fYear
2014
fDate
2-4 April 2014
Firstpage
1
Lastpage
3
Abstract
In this paper, RF performance and non-linearity analysis of different silicon substrates including standard, porous, high-resistivity (HR) and trap-rich HR types (TR) are explored experimentally and by simulation. The investigation is done by means of coplanar transmission lines (CPW) fabricated on these substrates. It is demonstrated that TR-Si characteristics in terms of high resistivity, attenuation and linearity are effectively enhanced.
Keywords
coplanar transmission lines; elemental semiconductors; nonlinear network analysis; silicon; RF nonlinearity analysis; Si; coplanar transmission lines; high-resistivity silicon substrate; trap-rich HR silicon substrate; Conductivity; Coplanar waveguides; Harmonic distortion; RF signals; Radio frequency; Silicon; Substrates; CMOS technology; High-resistivity (HR) Si substrate; harmonic distortion; non-linear analysis; porous silicon (PSi); trap-rich (TR) Si substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
Conference_Location
Leuven
Type
conf
DOI
10.1109/INMMIC.2014.6815104
Filename
6815104
Link To Document