Title :
Forward body-bias SRAM circuitry on bulk Si with twin double-well
Author :
Kioi, K. ; Kakimoto, Shinji
Author_Institution :
Central Res. Labs., Sharp Corp., Nara
fDate :
11/6/1997 12:00:00 AM
Abstract :
A novel SRAM cell suitable for low-voltage adiabatic logic is proposed. This cell uses forward body-bias effects, which are controlled by the stored data, to prevent a passgate transistor from turning on when a large source-to-drain voltage exists
Keywords :
CMOS memory circuits; SRAM chips; memory architecture; silicon; SRAM circuitry; Si; bulk Si; forward body-bias effects; low-voltage adiabatic logic; static RAM; twin double-well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971327
