Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

Author

Lauenstein, Jean-Marie ; Ladbury, Raymond L. ; Goldsman, Neil ; Kim, Hak S. ; Batchelor, David A. ; Phan, Anthony M.

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

Volume

57

Issue

6

fYear

2010

Firstpage

3443

Lastpage

3449

Abstract

A TCAD simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.

Keywords

power MOSFET; space vehicle electronics; SEE response curve; SEGR; TCAD simulation-based method; high-energy accelerator SEGR test data; high-energy heavy-ion accelerator test data; high-voltage power MOSFET; higher energy on-orbit ions; mission linear energy transfer; single-event effect; single-event gate rupture; space-mission LET requirements; Ions; MOSFETs; Simulation; Space missions; Heavy ion; linear enery transfer (LET); single-event gate rupture (SEGR); vertical power MOSFET;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2086486

Filename

5658030