DocumentCode
1394608
Title
High-efficiency non-resonant cavity light-emitting diodes
Author
Windisch, R. ; Heremans, Paul ; Dutta, Bahnishikha ; Kuijk, Maarten ; Kiesel, P. ; Dohler, Gottfried H. ; Borghs, G.
Author_Institution
IMEC, Leuven
Volume
34
Issue
11
fYear
1998
fDate
5/28/1998 12:00:00 AM
Firstpage
1153
Lastpage
1154
Abstract
860 nm surface-textured thin-film GaAs light-emitting diodes have been fabricated with a novel design which includes a selectively oxidised AlGaAs layer for current confinement. The highest reported external quantum efficiencies for injection currents below 0.3 mA are obtained. Furthermore, 20% external quantum efficiency for diodes with a current aperture of 12 μm is reported
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; molecular beam epitaxial growth; semiconductor epitaxial layers; thin film devices; 0.3 mA; 20 percent; 860 nm; GaAs active layer; GaAs-AlGaAs; current confinement layer; external quantum efficiencies; high-efficiency LED; injection currents; light-emitting diodes; nonresonant cavity LED; selectively oxidised AlGaAs layer; surface-textured thin-film LED;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980810
Filename
684612
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