Title :
Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs
Author :
Kuboyama, Satoshi ; Maru, Akifumu ; Ikeda, Naomi ; Hirao, Toshio ; Tamura, Takashi
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Abstract :
It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from the experimental data.
Keywords :
dosimetry; ion beam effects; power MOSFET; anomalously large degradation; microdose damage; microdose effect; single heavy ion; single-event effects; trench type power MOSFET; Ions; MOSFETs; Single event upset; Heavy ions; microdose; power MOSFETs; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2081686
