Title :
Low Dose Rate Effects in Shallow Trench Isolation Regions
Author :
Johnston, A.H. ; Swimm, R.T. ; Miyahira, T.F.
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
Abstract :
Dose-rate effects are studied in shallow trench isolation regions. Increased damage is observed at low dose rate, with a different dose dependence compared to tests done at high dose rate. A three-dimensional modeling program was used to show that charge trapping occurs much deeper in the trench region when sufficient charge is present to reduce the field in the trench.
Keywords :
CMOS integrated circuits; isolation technology; radiation effects; CMOS devices; charge trapping; dose dependence; dose rate effects; shallow trench isolation regions; three-dimensional modeling program; CMOS technology; Modeling; Radiation effects; CMOS; modeling; radiation effects; shallow trench isolation (STI); total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2085452
