• DocumentCode
    1394636
  • Title

    Low Dose Rate Effects in Shallow Trench Isolation Regions

  • Author

    Johnston, A.H. ; Swimm, R.T. ; Miyahira, T.F.

  • Author_Institution
    Jet Propulsion Lab., Pasadena, CA, USA
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3279
  • Lastpage
    3287
  • Abstract
    Dose-rate effects are studied in shallow trench isolation regions. Increased damage is observed at low dose rate, with a different dose dependence compared to tests done at high dose rate. A three-dimensional modeling program was used to show that charge trapping occurs much deeper in the trench region when sufficient charge is present to reduce the field in the trench.
  • Keywords
    CMOS integrated circuits; isolation technology; radiation effects; CMOS devices; charge trapping; dose dependence; dose rate effects; shallow trench isolation regions; three-dimensional modeling program; CMOS technology; Modeling; Radiation effects; CMOS; modeling; radiation effects; shallow trench isolation (STI); total dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2085452
  • Filename
    5658035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394636