Title :
Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories
Author :
Irom, Farokh ; Nguyen, Duc N. ; Underwood, Mark L. ; Virtanen, Ari
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less severe for highly scaled NAND flash memories.
Keywords :
NAND circuits; charge pump circuits; dosimetry; flash memories; ion beam effects; Micron Technology single-level cell; NAND flash memory; floating gate; heavy-ion single-event effect measurements; nonvolatile memory; single event upset; total ionizing dose response; Ionization; Nonvolatile memory; Single event upset; Floating gate; nonvolatile memory; single event effect; single event upset; single level; total ionizing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2084102
