Monte Carlo Simulations to Evaluate the Contribution of Si Bulk, Interconnects, and Packaging to Alpha-Soft Error Rates in Advanced Technologies

Author

Gedion, M. ; Wrobel, F. ; Saigné, F. ; Schrimpf, R.D. ; Mekki, J.

Author_Institution

Univ. Montpellier II, Montpellier, France

Volume

57

Issue

6

fYear

2010

Firstpage

3121

Lastpage

3126

Abstract

At ground level, alpha particles are a major source of soft errors. They may result from radioactive isotopes found in electronic device materials. In this paper, the materials´ contributions to alpha particle-induced Soft Error Rate (SER) and MCU are evaluated for a 65 nm CMOS technology. The trend of SER on 45 and 32 nm is also reported in this paper. These evaluations are performed by Monte Carlo simulations, taking into account the radioactive impurity contamination levels in the device.

Keywords

CMOS integrated circuits; Monte Carlo methods; alpha-particle sources; contamination; elemental semiconductors; impurities; integrated circuit interconnections; integrated circuit packaging; radioactive sources; radioisotopes; silicon; CMOS technology; Monte Carlo simulation; Si; alpha particle-induced soft error rate; electronic device materials; radioactive impurity contamination level; radioactive isotopes; Alpha particles; CMOS technology; Monte Carlo methods; Radioactive materials; Alpha particles; MC-ORACLE; bulk; interconnects; packaging; soft errors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2085446

Filename

5658041