• DocumentCode
    1394681
  • Title

    Present and Future Non-Volatile Memories for Space

  • Author

    Gerardin, Simone ; Paccagnella, Alessandro

  • Author_Institution
    Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3016
  • Lastpage
    3039
  • Abstract
    We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.
  • Keywords
    ferroelectric devices; flash memories; radiation hardening (electronics); ferroelectric devices; floating gate flash memories; ionizing radiation; magnetoresistive devices; nonvolatile memories; phase change memory; radiation effects; radiation hardness; single event effects; space applications; total dose; Ferroelectric devices; Flash memory; Magnetoresistive devices; Nonvolatile memory; Phase change memory; Radiation effects; Ferroelectric devices; flash memory; magnetoresistive devices; nonvolatile memory; phase change memory; radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2084101
  • Filename
    5658042