DocumentCode
1394681
Title
Present and Future Non-Volatile Memories for Space
Author
Gerardin, Simone ; Paccagnella, Alessandro
Author_Institution
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
Volume
57
Issue
6
fYear
2010
Firstpage
3016
Lastpage
3039
Abstract
We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.
Keywords
ferroelectric devices; flash memories; radiation hardening (electronics); ferroelectric devices; floating gate flash memories; ionizing radiation; magnetoresistive devices; nonvolatile memories; phase change memory; radiation effects; radiation hardness; single event effects; space applications; total dose; Ferroelectric devices; Flash memory; Magnetoresistive devices; Nonvolatile memory; Phase change memory; Radiation effects; Ferroelectric devices; flash memory; magnetoresistive devices; nonvolatile memory; phase change memory; radiation effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2010.2084101
Filename
5658042
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