DocumentCode :
1394698
Title :
Radiation Studies of Power LDMOS Devices for High Energy Physics Applications
Author :
Díez, Sergio ; Ullán, Miguel ; Pellegrini, Giulio ; Lozano, Manuel ; Sorge, Roland ; Knoll, Dieter
Author_Institution :
Inst. de Microelectron. de Barcelona, CNM, Barcelona, Spain
Volume :
57
Issue :
6
fYear :
2010
Firstpage :
3322
Lastpage :
3328
Abstract :
We present radiation hardness studies performed on LDMOS devices included in a 0.25 μm SiGe BiCMOS technology from IHP Microelectronics. Results show degradation of devices performances only beyond 1 × 1015 neq/cm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; nuclear electronics; power integrated circuits; power semiconductor devices; radiation hardening (electronics); IHP microelectronics; SiGe; SiGe BiCMOS technology; high energy physics; power LDMOS device; radiation hardness; size 0.25 mum; BiCMOS integrated circuits; Power semiconductor devices; Radiation effects; Radiation hardening; ATLAS upgrade; LDMOS; displacement damage; power devices; radiation effects; super-LHC;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2085051
Filename :
5658045
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1394698
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