Title :
An Adaptive Grid Scheme for Single-Event Upset Device Simulations
Author :
Cummings, Daniel J. ; Park, Hyunwoo ; Thompson, Scott E. ; Law, Mark E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
An adaptive grid scheme for single-event upset device simulations is presented. Single-event transient simulations for a reverse-biased N + /P diode and nMOSFET were performed using the adaptive grid scheme, a customized grid scheme and a uniform grid scheme. Results show that adaptive gridding can offer significant simulation time savings while preserving accuracy.
Keywords :
MOSFET; semiconductor device models; semiconductor diodes; adaptive grid scheme; charge collection; customized grid scheme; nMOSFET; reverse-biased diode; single-event transient simulations; single-event upset device simulations; Adaptive systems; MOSFETs; Simulation; Single event upset; Adaptive grid; charge collection; device simulation; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2080688
