Title :
Extended cavity ridge waveguide lasers operating at 1.5 μm using a simple damage induced quantum well intermixing process
Author :
McDougall, S.D. ; Kowalski, O.P. ; Bryce, A.C. ; Marsh, John H. ; Ironside, C.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
fDate :
11/6/1997 12:00:00 AM
Abstract :
The authors report extended cavity ridge waveguide lasers in InGaAs-InGaAsP, intermixed by damage induced via a silica sputtering process, with selective intermixing achieved through photoresist masking. Laser threshold currents indicate passive waveguide losses of 4.4 cm-1
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; sputter deposition; waveguide lasers; 1.5 micron; InGaAs-InGaAsP; SiO2; damage induced QW intermixing process; extended cavity ridge lasers; laser threshold currents; passive waveguide losses; photoresist masking; quantum well intermixing process; ridge waveguide lasers; selective intermixing; semiconductor lasers; silica sputtering process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971310
