• DocumentCode
    1394754
  • Title

    Extended cavity ridge waveguide lasers operating at 1.5 μm using a simple damage induced quantum well intermixing process

  • Author

    McDougall, S.D. ; Kowalski, O.P. ; Bryce, A.C. ; Marsh, John H. ; Ironside, C.N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ.
  • Volume
    33
  • Issue
    23
  • fYear
    1997
  • fDate
    11/6/1997 12:00:00 AM
  • Firstpage
    1957
  • Lastpage
    1958
  • Abstract
    The authors report extended cavity ridge waveguide lasers in InGaAs-InGaAsP, intermixed by damage induced via a silica sputtering process, with selective intermixing achieved through photoresist masking. Laser threshold currents indicate passive waveguide losses of 4.4 cm-1
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; sputter deposition; waveguide lasers; 1.5 micron; InGaAs-InGaAsP; SiO2; damage induced QW intermixing process; extended cavity ridge lasers; laser threshold currents; passive waveguide losses; photoresist masking; quantum well intermixing process; ridge waveguide lasers; selective intermixing; semiconductor lasers; silica sputtering process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971310
  • Filename
    640463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394754