• DocumentCode
    1394763
  • Title

    Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO2

  • Author

    Paillet, P. ; Touron, J.L. ; Leray, J.L. ; Cirba, C. ; Michez, A.

  • Author_Institution
    CEA, Bruyeres-le-Chatel, France
  • Volume
    45
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    1379
  • Lastpage
    1384
  • Abstract
    Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO2 have been determined by finite element simulation. The results obtained agree well with experimental charge detrapping measurements, and enable the simulation of post-irradiation effects in Si/SiO2 structures
  • Keywords
    MIS devices; electron traps; elemental semiconductors; finite element analysis; radiation effects; silicon; silicon compounds; MOS devices; charge detrapping measurements; energy levels; finite element simulation; multi-level radiation-induced charge trapping; post-irradiation effects; thermally activated phenomena; Charge carrier processes; Current measurement; Differential equations; Electron mobility; Electron traps; Energy states; Finite element methods; Photonic band gap; Poisson equations; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.685210
  • Filename
    685210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394763