• DocumentCode
    1394766
  • Title

    A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal

  • Author

    Kanyogoro, Nderitu ; Buchner, Stephen ; McMorrow, Dale ; Hughes, Harold ; Liu, Michael S. ; Hurst, Al ; Carpasso, Charles

  • Author_Institution
    GTEC, Crofton, MD, USA
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3414
  • Lastpage
    3418
  • Abstract
    A novel methodology for completely removing the silicon substrate of SOI devices for single-event effects testing is introduced and demonstrated using a 90 nm, 4 Mb SRAM test vehicle. Applications and significance are discussed.
  • Keywords
    CMOS integrated circuits; SRAM chips; ion beam effects; laser beam effects; nuclear electronics; silicon-on-insulator; CMOS/SOI SRAM substrate removal; SRAM test vehicle; heavy ion irradiation; pulsed laser irradiation; single event effect testing; SRAM chips; Silicon on insulator technology; Single event upset; Substrates; Heavy ions; SRAM; laser; silicon substrate; single-event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2085450
  • Filename
    5658055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1394766